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156×156

156×156 Mono-crystalline wafer  
Item Specification
Growth Method CZ
Conductivity Type P
Dopant Boron
Orientation 100〉±1.0°
Dimension 156±0.5mm
Diameter 200±0.5mm
Thickness 200±20μm
Geometry Square
Resistivity  1-3Ω.cm
Life Time 10μs
Oxygen Concentration 1×1018atoms/cm3
Carbon Concentration 5×1016atoms/cm3
Warpage&Bow ≤75μm
TTV ≤40μm
Dislocation Density 1000pcs/cm3
Saw Marks Depth10μm
Edge Defect Width0.4mm, Length0.8mm,quantity2unitsdistance30mm
Surface No cracks and pin holes visible with the naked eye
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